Low compensation vapor phase epitaxial gallium arsenide
نویسندگان
چکیده
منابع مشابه
Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition
Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition
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ii Abstract (in Finnish) iiiin Finnish) iii
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The surface roughness of gallium arsenide ~001! films produced by metalorganic vapor-phase epitaxy has been studied as a function of temperature and growth rate by in situ scanning tunneling microscopy. Height–height correlation analysis reveals that the root-mean-height difference follows a power-law dependence on lateral separation, i.e., G(L)5kL, up to a critical distance Lc , after which it...
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The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 1C. A two-step growth method was used to deposit the GaAs films with an optimum nucleation temperature of 400 1C. Layers nucleated at 350 1C or below were found to be polycrystalline whereas those nucleate...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1983
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.94327